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| S8050LT1 PLASTIC-ENCAPSULATE TRANSISTORS TRANSISTOR NPN SOT--23 -- S8050LT1 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V(BR)CBO : 40 WTamb=25 1. BASE A V 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICSTamb=25 Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) unless otherwise specified Test conditions IE=0 MIN 40 25 5 0.1 0.1 0.1 120 50 0.6 1.2 1.4 V V 350 TYP MAX UNIT V V V Parameter Collector-base breakdown Ic= 100A Collector-emitter breakdown Emitter-base breakdown current current current Ic= 0.1mA IB=0 IE=100A IC=0 VCB=40 V , IE=0 voltage Collector cut-off Collector cut-off Emitter cut-off A A A VCB=20V , IE=0 VEB= 5V , VCE=1V, VCE=1V, IC=0 IC= 50mA IC= 500mA DC current gain(note) HFE(2) Collector-emitter saturation Base-emitter saturation Base-emitter voltage voltage VCE(sat) VCE(sat) VBE IC=500 mA, IB= 50mA IC=500 mA, IB= 50mA IE= 100mA VCE=6V, IC= 20mA 150 voltage Transition frequency fT f=30MHz MHz CLASSIFICATION OF HFE(1) Rank Range L 100-200 H 200-350 DEVICE MARKING : S8050LT1=J3Y Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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